UHV Plasma enhanced chemical vapor deposition

 

   

Model : UHV-PECVD-001 by CNT

Key parameters：

Base Pressure：Load lock 5E-10 Torr, Process chamber 5E-9 Torr

Process Pressure: 10-1000 mTorr

Temperature: up to 450℃

RF Power ：10~1000W

RF Frequency: 13.56MHz

Available Gases：Ar, O2, CF4, N2O, SiH4, NH3.

Sample size：2 inch

Applications：

This UHV-PECVD is a plasma processing system with ultra-high base vacuum to carry out high quality plasma enhanced chemical vapor deposition (PECVD) of SiOx, SiNx, and SiOxNy for a wide range of applications including photonics structures, passivation, hard mask, etc. It is also available in Reactive Ion Etch (RIE) mode.