Ion Beam Etching

 

   

    Model：LKJ-3D-150

    Key Parameters:

    Etching area：up to six inch

    Vacuum pressure;

    base pressure：5E-4Pa; process pressure：2E-2Pa;

    Water-cool sample stage, temperature below 18.5℃

    Lon energy：≤350eV

    Etching efficiency：Si etching rate is 122.75A/min, with 300 eV ion energy.

    Etching uniformity of 2" Si wafer is about 2%.