FIB

 

   

Model : FEI Scios

Key parameters：

Pressure : 5E-4Pa

Ion source: Liquid Ga Ion Source

Ion beam resolution: <5 nm @30kV

Ion beam current: 1.5pA~6.5nA

Electron beam resolution: <1 nm @30kV (secondary electron)

Accelerating voltage: 0.5kV-30kV

Resolution of backscattered electrons: <3 nm @30kV