ICP

 

   

Model : UHV-ICP

Key parameters :

Base pressure : Buffer chamber < 8E-10 Torr; Process chamber < 5E-9 Torr

ICP power : 0-1000W (Top); CCP power 0- 600W (Bottom)

Gas flow rate:0-100 SCCM

Process pressure: 5-50 mTorr

Gas : Cl2, BCl3, CF4, Ar, O2, N2